2QD0435T17-C

2QD0435T17-C-xx is a high power, dual-channel compact gate driver core designed for high reliability applications based on the ASIC chipset developed by Bronze Technologies.

2QD0435T17-C-xx can be used for IGBT modules with a blocking voltage up to 1700V. It can be applied to various topologies by adding proper peripheral circuitry. 

Bronze_2QD0435T17-C_EN_V1.6

Typical Applications

Engergy storage converters
Wind power converters
PV inverters
Motor Drives
SVG
APF

Features

Dual-channel IGBT gate driver core
Blocking voltage up to 1700V
Peak current ±35A, 4W output power per channel
Up to 5000V isolation voltage
Direct/half-bridge mode available
Primary/secondary side undervoltage lockout
IGBT short-circuit protection integrated
Advanced active clamping integrated

Mechanical Structure

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Block Diagram

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Key parameters

Maximum Voltage of Power Device 1700V Maximum Switching Frequency 100kHz
Turn-ON Voltage 15V Turn-OFF Voltage -10V
Driving Power 4W Gate Driving Current ±35A
Power Supply Voltage 15V Maximum Supply Current 620mA
Operating Temperature -40~+85℃ Primary and Secondary Side insulation Voltage 5000Vac