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Towards City of Future | Bronze Technologies’ IGBT Drives Help Shenzhen Metro Line 14 into Operation

Driving into metro era with Pingshan

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Exhibition News | Bronze Technologies Shows Its New Gate Drive ICs at the 6th IEEE Symposium on Emerging Technology of Transportation Electrification

The debut of new product came out with a bang

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Bronze Technologies Attended the 5th Symposium on Emerging Technology of Transportation Electrification

From May 14th to 15th, the 5th IEEE Symposium on Emerging Technology of Transportation Electrification, co-sponsored by CPSS (China Power Supply Society) TEC (Transportation Electrification Committee), Tongji University, CRRC Zhuzhou Electric Locomotive Research Institute Co., Ltd., and EEA of Tsinghua University was held in Shanghai. Fu Junyin, general manager of Bronze Technologies, was invited to the Symposium and made a report.

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Bronze Technologies Unveiled Its Power Device Dynamic Parameter Test system in Electronica China 2022 in Shanghai

On April 16, the three-day Electronica China 2022 successfully closed. In the exhibition, the power device dynamic parameter test system in-house developed Bronze Technologies made its debut in the exhibition, attracting wide attention from the industry with its excellent performance.

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Product News | Bronze Technologies Launched Compact Drivers for NPC I-type 3-level Systems Up to 1000V

The NPC I-type 3-level small and medium power DC/AC converter systems up to 1000V feature high integration, high power density and low cost. Bronze Technologies has specially designed gate driver 2QD0108T06-SE2 for this system.

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Construction Started! Groundbreaking Ceremony for Bronze Wide-Band Gap Semiconductor Industry Base

On the morning of January 18, the groundbreaking ceremony for the Bronze Wide-band Gap Semiconductor Industry Base was held in Pingshan, Shenzhen, marking the beginning of a new stage of Bronze Technologies Group.

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Technical Sharing | An Advanced Gate Driver Solution Powered By Inductive Magnetic-coupling for Press Pack IGBTs

The inductive-magnetic-coupling-powered gate driver solution wires a single silicone cable with high insulation performance through the secondary side of the gate driver unit to be powered, with both ends of the cable connected to the output terminals of the primary side current source. By controlling the current flowing through the silicone cable, the primary side current source supplies power to the secondary side driver unit.

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