2QD0535T33-C is a dual-channel, high-power, high voltage rated driver designed based on the ASIC chipset developed in-house by Bronze Technologies. The driver is specially designed for high-voltage, high-power applications.
2QD0535T33-C can drive most of the IGBT modules up to 3300V on the market. Its built-in functions allow it to support parallel connection of multiple drivers, as well as multi-level topology applications.
2QD0535T33-C is a highly compact driver core in its power range available for industrial applications, suitable for various structural designs.
Wind converters |
PV inverters |
Energy storage converters |
Medium voltage drives |
Dual-channel IGBT gate driver core |
Self-developed core components |
Blocking voltage up to 3300V |
5W driving power per channel |
±35A peak current |
Integrated with isolated DC/DC converters |
Gate Drive Voltage+15V/-10V |
Primary/secondary under-voltage protection |
Direct / Half-bridge mode available |
Active clamping |
VCE short-circuit protection |
Up to 10000Vac isolation voltage |
| Maximum Voltage of Power Device | 3300V | Maximum Switching Frequency | 100kHz |
| Turn-ON Voltage | 15V | Turn-OFF Voltage | -10V |
| Driving Power | 5W | Gate Driving Current | ±35A |
| Power Supply Voltage | 15V | Maximum Supply Current | 833mA |
| Operating Temperature | -40~+85℃ | Primary and Secondary Side Insulation Voltage | 10000Vac |
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